InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

K. H. Lee, P. C. Chang, S. J. Chang, S. L. Wu

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

InGaN epitaxial films grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as precursors exhibited different optical and electrical properties. The films were characterized by x-ray diffraction, photoluminescence, secondary ion mass spectroscopy, and atomic force microscopy. Impacts of unactivated Mg-doped GaN in situ grown cap layers on InGaN and GaN films were further investigated. Current-voltage and spectral response measurements combined with Hall-effect measurement and analytical modeling have been used to assess possible current transport mechanisms of reverse dark and photo current flow in metal-semiconductor-metal photodetectors fabricated from InGaN and GaN. Unlike the dominant thermionic emission, which can be blocked by higher and thicker potential barrier in GaN, the trap-assisted tunneling is more pronounced in InGaN. The passivation effect on high density surface states in InGaN is proposed to explain the improved device performances after the incorporation of Mg-doped GaN.

原文English
文章編號083113
期刊Journal of Applied Physics
110
發行號8
DOIs
出版狀態Published - 2011 十月 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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