InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Computer Networks and Communications
- Electrical and Electronic Engineering