InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In0.23Ga0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In0.23Ga 0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.
|頁（從 - 到）||1020-1022|
|期刊||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版狀態||Published - 2004 五月|
All Science Journal Classification (ASJC) codes