InGaN/AIGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer

C. H. Chen, S. J. Chang, Y. K. Su

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In0.23Ga0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In0.23Ga 0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.

原文English
頁(從 - 到)1020-1022
頁數3
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
22
發行號3
DOIs
出版狀態Published - 2004 五月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜

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