InGaN/GaN blue light-emitting diodes with self-assembled quantum dots

Y. K. Su, S. J. Chang, L. W. Ji, C. S. Chang, L. W. Wu, W. C. Lai, T. H. Fang, K. T. Lam

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) active layers were successfully fabricated by using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). We have successfully formed nanoscale QDs embedded in quantum wells with a typical 3 nm height and 10 nm lateral dimension. It was found that a huge 68.4 meV blue shift in electroluminescence (EL) peak position as the injection current is increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs will strengthen the band-filling effect as the injection current increases.

原文English
頁(從 - 到)389-392
頁數4
期刊Semiconductor Science and Technology
19
發行號3
DOIs
出版狀態Published - 2004 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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