Nitride-based light-emitting diodes (LEDs) with Si-doped n--In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.
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