InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

L. W. Wu, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, C. H. Kuo, W. C. Lai, J. K. Sheu, J. M. Tsai, S. C. Chen, B. R. Huang

研究成果: Article同行評審

摘要

Nitride-based light-emitting diodes (LEDs) with Si-doped n--In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.

原文English
頁(從 - 到)411-414
頁數4
期刊Journal of Electronic Materials
32
發行號5
DOIs
出版狀態Published - 2003 五月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer」主題。共同形成了獨特的指紋。

引用此