InGaN/GaN light emitting diodes activated in O2 ambient

C. H. Kuo, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen, G. C. Chi

研究成果: Letter同行評審

55 引文 斯高帕斯(Scopus)

摘要

Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

原文English
頁(從 - 到)240-242
頁數3
期刊IEEE Electron Device Letters
23
發行號5
DOIs
出版狀態Published - 2002 5月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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