InGaN/GaN light emitting diodes with a p-down structure

Y. K. Su, S. J. Chang, Chih Hsin Ko, J. F. Chen, Ta Ming Kuan, Wen How Lan, Wen Jen Lin, Ya Tung Cherng, Jim Webb

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

Nitride-based p-down blue light emitting diodes (LEDs) were successfully fabricated. It was found that we could improve the crystal quality of these nitride-based p-town LEDs by inserting a codoped interlayer between the p-type cladding layer and MQW active layers. It was also found that the turn-on voltage could be reduced from 15 V to less than 5 V for the p-down LED with codoped layer and tunnel layer. The 20 mA output power was 1 mW for the p-down LED with an Mg+Si codoped interlayer and a rough p-tunnel layer.

原文English
頁(從 - 到)1361-1366
頁數6
期刊IEEE Transactions on Electron Devices
49
發行號8
DOIs
出版狀態Published - 2002 八月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「InGaN/GaN light emitting diodes with a p-down structure」主題。共同形成了獨特的指紋。

引用此