Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.
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