InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Y. P. Hsu, Shoou-Jinn Chang, Y. K. Su, C. S. Chang, S. C. Shei, Yu-Cheng Lin, C. H. Kuo, L. W. Wu, S. C. Chen

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.

原文English
頁(從 - 到)403-406
頁數4
期刊Journal of Electronic Materials
32
發行號5
DOIs
出版狀態Published - 2003 五月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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