InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts

Chia Sheng Chang, Shoou Jinn Chang, Yan Kuin Su, Yu Zung Chiou, Yi Chao Lin, Yu Pin Hsu, Shih Chang Shei, Hsin Ming Lo, Jung Chin Ke, Shih Chih Chen, Chun Hsing Liu

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were 5.0 × 10-4 Ωcm2, 1.3 × 10-3 Ωcm2 and 7.2 × 10-4 Ωcm2 for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact.

原文English
頁(從 - 到)3324-3327
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
發行號6 A
DOIs
出版狀態Published - 2003 六月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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