InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer

S. M. Wang; T. P. Chen; S. J. Chang; P. C. Chang; S. J. Young; H. Hung; M. H. Lin

doi:10.1109/ISDRS.2009.5378295

InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer

S. M. Wang, T. P. Chen, S. J. Chang, P. C. Chang, S. J. Young, H. Hung, M. H. Lin

微電子工程研究所

研究成果: Conference contribution

原文	English
主出版物標題	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378295
出版狀態	Published - 2009
事件	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States 持續時間: 2009 12月 9 → 2009 12月 11

出版系列

名字	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
國家/地區	United States
城市	College Park, MD
期間	09-12-09 → 09-12-11

All Science Journal Classification (ASJC) codes

電氣與電子工程
電子、光磁材料

存取文件

10.1109/ISDRS.2009.5378295

其它文件與鏈接

引用此

Wang, S. M., Chen, T. P., Chang, S. J., Chang, P. C., Young, S. J., Hung, H., & Lin, M. H. (2009). InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer. 於 2009 International Semiconductor Device Research Symposium, ISDRS '09 文章 5378295 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378295

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title = "InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer",

author = "Wang, {S. M.} and Chen, {T. P.} and Chang, {S. J.} and Chang, {P. C.} and Young, {S. J.} and H. Hung and Lin, {M. H.}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378295",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Wang, SM, Chen, TP, Chang, SJ, Chang, PC, Young, SJ, Hung, H & Lin, MH 2009, InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer. 於 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378295, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09-12-09. https://doi.org/10.1109/ISDRS.2009.5378295

TY - GEN

T1 - InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer

AU - Wang, S. M.

AU - Chen, T. P.

AU - Chang, S. J.

AU - Chang, P. C.

AU - Young, S. J.

AU - Hung, H.

AU - Lin, M. H.

PY - 2009

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DO - 10.1109/ISDRS.2009.5378295

M3 - Conference contribution

AN - SCOPUS:77949385065

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -