Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.
|頁（從 - 到）||214-217|
|期刊||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|出版狀態||Published - 2004 八月 25|
All Science Journal Classification (ASJC) codes