InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai, C. C. Lin

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

原文English
頁(從 - 到)214-217
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
111
發行號2-3
DOIs
出版狀態Published - 2004 八月 25

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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