InGaN/GaN MQW p-n junction photodetectors

Yu Zung Chiou; Yan Kuin Su; Shoou Jinn Chang; Yi Chao Lin; Chia Sheng Chang; Chin Hsiang Chen

doi:10.1016/S0038-1101(02)00230-7

InGaN/GaN MQW p-n junction photodetectors

Yu Zung Chiou, Yan Kuin Su, Shoou Jinn Chang, Yi Chao Lin, Chia Sheng Chang, Chin Hsiang Chen

微電子工程研究所

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

InGaN/GaN multiquantum well (MQW) p-n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p-n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p-n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.

原文	English
頁（從 - 到）	2227-2229
頁數	3
期刊	Solid-State Electronics
卷	46
發行號	12
DOIs	https://doi.org/10.1016/S0038-1101(02)00230-7
出版狀態	Published - 2002 12月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
材料化學
電氣與電子工程

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10.1016/S0038-1101(02)00230-7

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@article{2463f42a1bf24aaca4ee5c935bf033e0,

title = "InGaN/GaN MQW p-n junction photodetectors",

abstract = "InGaN/GaN multiquantum well (MQW) p-n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p-n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 105 when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p-n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.",

author = "Chiou, {Yu Zung} and Su, {Yan Kuin} and Chang, {Shoou Jinn} and Lin, {Yi Chao} and Chang, {Chia Sheng} and Chen, {Chin Hsiang}",

note = "Funding Information: This work is partially supported by the National Science Council under contract number NSC-89-2215-E-006-005.",

year = "2002",

month = dec,

doi = "10.1016/S0038-1101(02)00230-7",

language = "English",

volume = "46",

pages = "2227--2229",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "12",

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TY - JOUR

T1 - InGaN/GaN MQW p-n junction photodetectors

AU - Chiou, Yu Zung

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

AU - Lin, Yi Chao

AU - Chang, Chia Sheng

AU - Chen, Chin Hsiang

N1 - Funding Information: This work is partially supported by the National Science Council under contract number NSC-89-2215-E-006-005.

PY - 2002/12

Y1 - 2002/12

N2 - InGaN/GaN multiquantum well (MQW) p-n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p-n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 105 when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p-n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.

AB - InGaN/GaN multiquantum well (MQW) p-n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p-n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 105 when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p-n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.

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U2 - 10.1016/S0038-1101(02)00230-7

DO - 10.1016/S0038-1101(02)00230-7

M3 - Article

AN - SCOPUS:0036890571

SN - 0038-1101

VL - 46

SP - 2227

EP - 2229

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

InGaN/GaN MQW p-n junction photodetectors

摘要

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