InGaN/GaN MQW p-n junction photodetectors

Yu Zung Chiou, Yan Kuin Su, Shoou Jinn Chang, Yi Chao Lin, Chia Sheng Chang, Chin Hsiang Chen

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN multiquantum well (MQW) p-n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p-n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 105 when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p-n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.

原文English
頁(從 - 到)2227-2229
頁數3
期刊Solid-State Electronics
46
發行號12
DOIs
出版狀態Published - 2002 十二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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