InGaN/GaN multiple quantum well (MQW) structures were prepared by metalorganic vapour phase epitaxy (MOVPE) with various InGaN growth conditions. It was found that growth rate and photoluminescence (PL) peak wavelength were determined by Ga and In flow rates, respectively. It was also found that the sample prepared with high InGaN growth rate exhibited low ν-defect related pits and good crystal quality. For the samples prepared with low growth rate, we could also improve the sample quality by increasing In/(In∈+∈Ga) flow rate ratio.
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