InGaN/GaN MQW structures prepared with various In and Ga flow rates

W. C. Lai, K. T. Lam, C. H. Liu, S. J. Chang

研究成果: Article同行評審

摘要

InGaN/GaN multiple quantum well (MQW) structures were prepared by metalorganic vapour phase epitaxy (MOVPE) with various InGaN growth conditions. It was found that growth rate and photoluminescence (PL) peak wavelength were determined by Ga and In flow rates, respectively. It was also found that the sample prepared with high InGaN growth rate exhibited low ν-defect related pits and good crystal quality. For the samples prepared with low growth rate, we could also improve the sample quality by increasing In/(In∈+∈Ga) flow rate ratio.

原文English
頁(從 - 到)1-7
頁數7
期刊International Journal of Electronics
94
發行號1
DOIs
出版狀態Published - 2007 一月 1

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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