InGaN/GaN multi-quantum dot light-emitting diodes

L. W. Ji, Y. K. Su, S. J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L. Du, H. Chen

研究成果: Article同行評審

39 引文 斯高帕斯(Scopus)

摘要

It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition. We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.

原文English
頁(從 - 到)114-118
頁數5
期刊Journal of Crystal Growth
263
發行號1-4
DOIs
出版狀態Published - 2004 三月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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