InGaN/GaN multi-quantum dot light-emitting diodes

L. W. Ji, Y. K. Su, S. J. Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition (MOCVD). We have formed nanoscale InGaN self- assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 V and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.

原文English
頁(從 - 到)2405-2408
頁數4
期刊Physica Status Solidi C: Conferences
1
發行號10
DOIs
出版狀態Published - 2004

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學

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