InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers

Ping Chuan Chang, Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Po Chang Chen, Yi De Jhou, Chun Hsing Liu, Hung Hung, Shih Ming Wang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN multiple-quantum well (MQW) structure was epitaxial growth by metal-organic chemical vapor deposition (MOCVD). Their MIS photodiodes with SiO2 interlayer were fabricated successfully using photochemical vapor deposition. The normal undoped-GaN metal-semiconductor-metal (MSM) potodiodes were also prepared to compare with them. It was found that the minimum dark current of InGaN/GaN MQW photodiodes was 4.2 × 10 -13 A with 88nm-thick SiO2 layer under 5 V reverse bias voltage. Furthermore, it was found that we can significantly reduce the dark current of this photodiodes by inserting a thin SiO2 interlayer in between metal electrode and the underneath InGaN/GaN MQW. With a 53 nm-thick SiO2 interlayer, it was also found that we could achieve a high 1.53 × 103 photo current to dark current contrast.

原文English
頁(從 - 到)2008-2010
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
發行號4 B
DOIs
出版狀態Published - 2004 四月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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