InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

Chin Hsiang Chen, Shoou-Jinn Chang, Yan Kuin Su

研究成果: Conference article

10 引文 (Scopus)

摘要

An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.

原文English
頁(從 - 到)2257-2260
頁數4
期刊Physica Status Solidi C: Conferences
發行號7
DOIs
出版狀態Published - 2003 十二月 1
事件5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
持續時間: 2003 五月 252003 五月 30

指紋

light emitting diodes
quantum wells
wavelengths
color
thyristors
low currents
nitrides
light emission
sapphire
chips
injection
output
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

引用此文

@article{0fb812a9078f4348850bdc9d7c207587,
title = "InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes",
abstract = "An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.",
author = "Chen, {Chin Hsiang} and Shoou-Jinn Chang and Su, {Yan Kuin}",
year = "2003",
month = "12",
day = "1",
doi = "10.1002/pssc.200303418",
language = "English",
pages = "2257--2260",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "7",

}

InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes. / Chen, Chin Hsiang; Chang, Shoou-Jinn; Su, Yan Kuin.

於: Physica Status Solidi C: Conferences, 編號 7, 01.12.2003, p. 2257-2260.

研究成果: Conference article

TY - JOUR

T1 - InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

AU - Chen, Chin Hsiang

AU - Chang, Shoou-Jinn

AU - Su, Yan Kuin

PY - 2003/12/1

Y1 - 2003/12/1

N2 - An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.

AB - An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84875115024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875115024&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303418

DO - 10.1002/pssc.200303418

M3 - Conference article

AN - SCOPUS:84875115024

SP - 2257

EP - 2260

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7

ER -