InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, W. C. Lai, J. K. Sheu, T. Y. Tsai

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

原文English
頁(從 - 到)419-422
頁數4
期刊Journal of Electronic Materials
32
發行號5
DOIs
出版狀態Published - 2003 五月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping」主題。共同形成了獨特的指紋。

引用此