InGaNGaN multiple-quantum-well LEDs with Si-doped barriers

H. Hung, K. T. Lam, S. J. Chang, C. H. Chen, H. Kuan, Y. X. Sun

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

InGaNGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with undoped and Si-doped barriers were fabricated. It was found that we could enhance crystal quality of the MQW structure by introducing Si doping into the GaN barrier layers. It was also found that carriers can be injected into the MQW active region more easily for the LED with Si-doped barriers. With a 20 mA injection current, it was found that forward voltages were 3.29 and 3.17 V for the LEDs with undoped barriers and Si-doped barriers, respectively. The output power and external quantum efficiency of the LED with Si-doped barriers were also found to be larger.

原文English
頁(從 - 到)H455-H458
期刊Journal of the Electrochemical Society
155
發行號6
DOIs
出版狀態Published - 2008 五月 9

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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