InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers

Pai Yang Tsai, Hou Kuei Huang, Chien Min Sung, Ming Chi Kan, Yeong-Her Wang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Vertical light-emitting diodes (VLEDs) with diamondlike carbon/titanium (DLC/Ti) heat-spreading layers on silicon (Si) substrates are investigated. Good thermal conductivity coupled with a thermal expansion coefficient similar to that of gallium nitride enables DLC/Ti to enhance heat dissipation via the Si substrate for Si-bonded VLEDs. The relative light intensity of VLEDs with DLC/Ti operating at 1 A is 10% greater than that of VLEDs without DLC/Ti. The output power droop can be further improved. A slight red shift of 0.5 nm occurs when the injection current is increased from 0.7 to 1 A. VLEDs with DLC/Ti also have lower and more uniform surface temperatures than VLEDs without DLC/Ti. The measured thermal resistance of VLEDs with and without DLC/Ti is 0.63 and 1.51 K/W at an injection current of 350 mA, respectively. This observation shows that the proposed DLC/Ti heat-spreading layer facilitates efficient thermal management in VLEDs.

原文English
文章編號6547651
頁(從 - 到)1029-1031
頁數3
期刊IEEE Electron Device Letters
34
發行號8
DOIs
出版狀態Published - 2013 六月 28

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers」主題。共同形成了獨特的指紋。

引用此