InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

Kuan Wei Lee, Po Wen Sze, Kai Lin Lee, Mau Phon Houng, Yeong Her Wang

研究成果: Conference contribution

摘要

The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

原文English
主出版物標題2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
發行者Institute of Electrical and Electronics Engineers Inc.
頁面609-612
頁數4
ISBN(列印)0780393392, 9780780393394
DOIs
出版狀態Published - 2005 一月 1
事件2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
持續時間: 2005 十二月 192005 十二月 21

出版系列

名字2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
國家Hong Kong
城市Howloon
期間05-12-1905-12-21

指紋

Two dimensional electron gas
Gate dielectrics
High electron mobility transistors
Electric breakdown
Leakage currents
Metals
Liquids
Electric potential
Oxide semiconductors
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此文

Lee, K. W., Sze, P. W., Lee, K. L., Houng, M. P., & Wang, Y. H. (2005). InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (頁 609-612). [1635347] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635347
Lee, Kuan Wei ; Sze, Po Wen ; Lee, Kai Lin ; Houng, Mau Phon ; Wang, Yeong Her. / InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. 頁 609-612 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).
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abstract = "The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.",
author = "Lee, {Kuan Wei} and Sze, {Po Wen} and Lee, {Kai Lin} and Houng, {Mau Phon} and Wang, {Yeong Her}",
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Lee, KW, Sze, PW, Lee, KL, Houng, MP & Wang, YH 2005, InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635347, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., 頁 609-612, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635347

InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. / Lee, Kuan Wei; Sze, Po Wen; Lee, Kai Lin; Houng, Mau Phon; Wang, Yeong Her.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 609-612 1635347 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

研究成果: Conference contribution

TY - GEN

T1 - InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

AU - Lee, Kuan Wei

AU - Sze, Po Wen

AU - Lee, Kai Lin

AU - Houng, Mau Phon

AU - Wang, Yeong Her

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N2 - The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

AB - The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

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T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

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BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

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Lee KW, Sze PW, Lee KL, Houng MP, Wang YH. InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 609-612. 1635347. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2005.1635347