InGaP/GaAs resonant-tunneling transistor (RTT)

Wen-Chau Liu, Y. S. Shie, W. L. Chang, S. C. Feng, K. H. Yu, J. H. Yan

研究成果: Paper

摘要

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔEV) at the InGaP/GaAs heterointerface, a high current gain (βmax ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

原文English
頁面240-242
頁數3
出版狀態Published - 1999 一月 1
事件Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
持續時間: 1998 十二月 141998 十二月 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市Perth, WA, Aust
期間98-12-1498-12-16

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此

Liu, W-C., Shie, Y. S., Chang, W. L., Feng, S. C., Yu, K. H., & Yan, J. H. (1999). InGaP/GaAs resonant-tunneling transistor (RTT). 240-242. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .