InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen Chau Liu, Shiou Ying Cheng, Jung Hui Tsai, Po Hung Lin, Jing Yuh Chen, Wei Chou Wang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE v) at the InGaP/GaAs heterointerface, a high current gain (β max ≃ 220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage (I-V) characteristics at room temperature.

原文English
頁(從 - 到)515-517
頁數3
期刊IEEE Electron Device Letters
18
發行號11
DOIs
出版狀態Published - 1997 11月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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