In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained.
|頁（從 - 到）||475-478|
|期刊||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|出版狀態||Published - 1999|
|事件||Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz|
持續時間: 1999 5月 16 → 1999 5月 20
All Science Journal Classification (ASJC) codes