InGaP/InGaAs double delta-doped channel transistor

Hung Ming Chuang; Shiou Ying Cheng; Xin Da Liao; Chun Yuan Chen; Wen Chau Liu

doi:10.1049/el:20030660

InGaP/InGaAs double delta-doped channel transistor

Hung Ming Chuang, Shiou Ying Cheng, Xin Da Liao, Chun Yuan Chen, Wen Chau Liu

微電子工程研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A new InGaP/InGaAs double δ-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.

原文	English
頁（從 - 到）	1016-1018
頁數	3
期刊	Electronics Letters
卷	39
發行號	13
DOIs	https://doi.org/10.1049/el:20030660
出版狀態	Published - 2003 6月 25

All Science Journal Classification (ASJC) codes

電氣與電子工程

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10.1049/el:20030660

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title = "InGaP/InGaAs double delta-doped channel transistor",

abstract = "A new InGaP/InGaAs double δ-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.",

author = "Chuang, {Hung Ming} and Cheng, {Shiou Ying} and Liao, {Xin Da} and Chen, {Chun Yuan} and Liu, {Wen Chau}",

year = "2003",

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day = "25",

doi = "10.1049/el:20030660",

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T1 - InGaP/InGaAs double delta-doped channel transistor

AU - Chuang, Hung Ming

AU - Cheng, Shiou Ying

AU - Liao, Xin Da

AU - Chen, Chun Yuan

AU - Liu, Wen Chau

PY - 2003/6/25

Y1 - 2003/6/25

N2 - A new InGaP/InGaAs double δ-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.

AB - A new InGaP/InGaAs double δ-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.

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DO - 10.1049/el:20030660

M3 - Article

AN - SCOPUS:0038722351

SN - 0013-5194

VL - 39

SP - 1016

EP - 1018

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

InGaP/InGaAs double delta-doped channel transistor

摘要

All Science Journal Classification (ASJC) codes

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