InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator

Hsien Chang Lin; Kuan Wei Lee; Chao Hsien Tu; Po Wen Sze; Yeong Her Wang

doi:10.1109/EDSSC.2007.4450092

InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator

Hsien Chang Lin, Kuan Wei Lee, Chao Hsien Tu, Po Wen Sze, Yeong Her Wang

微電子工程研究所

研究成果: Conference contribution

摘要

An InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves that the proposed MOS-PHEMT is promising for device applications.

原文	English
主出版物標題	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面	181-184
頁數	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450092
出版狀態	Published - 2007
事件	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan 持續時間: 2007 12月 20 → 2007 12月 22

出版系列

名字	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區	Taiwan
城市	Tainan
期間	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

電氣與電子工程
電子、光磁材料

存取文件

10.1109/EDSSC.2007.4450092

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引用此

Lin, H. C., Lee, K. W., Tu, C. H., Sze, P. W., & Wang, Y. H. (2007). InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (頁 181-184). 文章 4450092 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450092

@inproceedings{0572c05ae4804f6b9f37a5b460b9b679,

title = "InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator",

abstract = "An InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves that the proposed MOS-PHEMT is promising for device applications.",

author = "Lin, {Hsien Chang} and Lee, {Kuan Wei} and Tu, {Chao Hsien} and Sze, {Po Wen} and Wang, {Yeong Her}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450092",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "181--184",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Lin, HC, Lee, KW, Tu, CH, Sze, PW & Wang, YH 2007, InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450092, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, 頁 181-184, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450092

TY - GEN

T1 - InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator

AU - Lin, Hsien Chang

AU - Lee, Kuan Wei

AU - Tu, Chao Hsien

AU - Sze, Po Wen

AU - Wang, Yeong Her

PY - 2007

Y1 - 2007

N2 - An InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves that the proposed MOS-PHEMT is promising for device applications.

AB - An InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves that the proposed MOS-PHEMT is promising for device applications.

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UR - http://www.scopus.com/inward/citedby.url?scp=43049164057&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450092

DO - 10.1109/EDSSC.2007.4450092

M3 - Conference contribution

AN - SCOPUS:43049164057

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 181

EP - 184

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator

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All Science Journal Classification (ASJC) codes

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