InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor

H. M. Chuang, K. H. Yu, K. W. Lin, C. C. Cheng, J. Y. Chen, Wen-Chau Liu

研究成果: Conference article

摘要

The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

原文English
頁(從 - 到)271-274
頁數4
期刊Institute of Physics Conference Series
174
出版狀態Published - 2003 十二月 1
事件Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland
持續時間: 2002 十月 72002 十月 10

指紋

transconductance
high electron mobility transistors
microwave circuits
frequency response
microwaves
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

引用此文

Chuang, H. M., Yu, K. H., Lin, K. W., Cheng, C. C., Chen, J. Y., & Liu, W-C. (2003). InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor. Institute of Physics Conference Series, 174, 271-274.
Chuang, H. M. ; Yu, K. H. ; Lin, K. W. ; Cheng, C. C. ; Chen, J. Y. ; Liu, Wen-Chau. / InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor. 於: Institute of Physics Conference Series. 2003 ; 卷 174. 頁 271-274.
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InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor. / Chuang, H. M.; Yu, K. H.; Lin, K. W.; Cheng, C. C.; Chen, J. Y.; Liu, Wen-Chau.

於: Institute of Physics Conference Series, 卷 174, 01.12.2003, p. 271-274.

研究成果: Conference article

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AU - Liu, Wen-Chau

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