InGaZnO metal-base transistor with high current gain

H. Y. Huang, S. J. Wang, C. H. Hung, C. H. Wu, W. C. Lin

研究成果: Article

摘要

The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.

原文English
頁(從 - 到)1465-1467
頁數3
期刊Electronics Letters
50
發行號20
DOIs
出版狀態Published - 2014 九月 25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • 引用此

    Huang, H. Y., Wang, S. J., Hung, C. H., Wu, C. H., & Lin, W. C. (2014). InGaZnO metal-base transistor with high current gain. Electronics Letters, 50(20), 1465-1467. https://doi.org/10.1049/el.2014.2201