Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface

Yu Fang, Wen Jay Lee, An Chen Yang, Guan Peng Chen, Nan Yow Chen, Kuo Hsing Kao

研究成果: Article同行評審

摘要

This work investigates the correlation between dipole formation and surface energy at a nonplanar dielectric interface on a Si nanowire (NW) by means of molecular dynamics simulations. According to the atom and charge distribution obtained by simulations, the built-in electric field and potential are calculated at the dielectric interface based on the Poisson equation. It is found that the built-in potential is dependent on the diameter of the Si NW, which is attributed to the dependence of the surface energy difference on the surface curvature of the dielectric heterointerface, driving atom diffusion and leading to a dipole layer at the interface. The impact of the built-in potential on the threshold voltage of a transistor with a multigate configuration is discussed as well.

原文English
文章編號9288738
頁(從 - 到)294-298
頁數5
期刊IEEE Transactions on Electron Devices
68
發行號1
DOIs
出版狀態Published - 2021 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface」主題。共同形成了獨特的指紋。

引用此