Inherent formation of porous p-type Si nanowires using palladium-assisted chemical etching

Jun Ming Chen, Chia Yuan Chen, C. P. Wong, Chia Yun Chen

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

Porous silicon (Si) nanowire arrays were directly fabricated from lightly p-doped Si substrates using a palladium (Pd)-assisted chemical etching at room temperature. The mechanistic studies indicated that anodic dissolution of Si was established by the accumulated positive charges at Pd/Si schottky interfaces in the presence of H2O2 oxidants. In addition to the primary etching direction vertically to the substrate planes, the additional sidewall etching was stimulated by the separated Pd nanoparticles during reaction that constitutes the porous features covering on the nanowires surfaces thoroughly. These combined effects lead to the distinct etching characteristics and remarkable photoluminescent properties of resulted nanostructures.

原文English
頁(從 - 到)498-502
頁數5
期刊Applied Surface Science
392
DOIs
出版狀態Published - 2017 1月 15

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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