Inhibiting the detrimental Cu protrusion in Cu through-silicon-via by highly (111)-oriented nanotwinned Cu

Ting Chun Lin, Chien Lung Liang, Shan Bo Wang, Yung Sheng Lin, Chin Li Kao, David Tarng, Kwang Lung Lin

研究成果: Article同行評審

摘要

Cu protrusion phenomenon, one of the biggest challenges of the Cu through-silicon-via (TSV) technology, results from the thermal stress accumulation and the following plastic deformation during thermal annealing. Herein, we proposed an effective approach to inhibiting the detrimental Cu protrusion by introducing a highly (111)-oriented nanotwinned Cu to the TSV structure. The Cu nanotwin structure, in comparison with the normal Cu structure, gave rise to a 70.3% decrement of the protrusion height during thermal annealing at 250°C. The protrusion inhibition was attributed to the effective interaction of high-fraction coherent nanotwin boundaries with dislocations. The presence of low-energy coherent twin boundaries impeded dislocation glide, giving rise to the TSV strengthening and the significant protrusion inhibition. The electrodeposited nanotwinned Cu TSV exhibited great thermal stability under thermal annealing at 250°C for 2 h, as evidenced by the slight micro-hardness loss, 6.7%, based on the nanoindentation analysis.

原文English
文章編號113782
期刊Scripta Materialia
197
DOIs
出版狀態Published - 2021 五月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業
  • 金屬和合金

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