Inhibiting the Kink Effect and Hot-Carrier Stress Degradation Using Dual-Gate Low-Temperature Poly-Si TFTs

Hong Chih Chen, Hong Yi Tu, Hui Chun Huang, Wei Chih Lai, Ting Chang Chang, Shin Ping Huang, Yu Fa Tu, Chuan Wei Kuo, Kuan Ju Zhou, Jian Jie Chen, Yu Shan Shih, Guan Fu Chen, Wan Ching Su

研究成果: Article

摘要

This study examines the appearance of a kink effect phenomenon in the ID-VD electrical characteristics of low-temperature polycrystalline Si thin-film transistors (LTPS TFTs) after high-current-induced hot-carrier stress (HCS). During HCS, electron-hole pairs were generated in the channel near the drain terminal owing to impact ionization. Next, the electrons were repelled towar the source by the drain electric field, thereby inducing the floating body effect, which lowered the source barrier. In addition, a dual-gate-structured LTPS was found to inhibit the electrical degradation caused by HCS. The COMSOL simulation indicated that in the dual-gate structure, holes at the upper and lower margins of the channel were inverted and inhibited the degradation caused by the floating body effect. Therefore, the use of dual-gate LTPS TFTs could facilitate high-current gate-on-array circuit applications in display panels.

原文English
文章編號8892585
頁(從 - 到)54-57
頁數4
期刊IEEE Electron Device Letters
41
發行號1
DOIs
出版狀態Published - 2020 一月

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此

Chen, H. C., Tu, H. Y., Huang, H. C., Lai, W. C., Chang, T. C., Huang, S. P., Tu, Y. F., Kuo, C. W., Zhou, K. J., Chen, J. J., Shih, Y. S., Chen, G. F., & Su, W. C. (2020). Inhibiting the Kink Effect and Hot-Carrier Stress Degradation Using Dual-Gate Low-Temperature Poly-Si TFTs. IEEE Electron Device Letters, 41(1), 54-57. [8892585]. https://doi.org/10.1109/LED.2019.2951935