Initial time-dependent current growth phenomenon in n -type organic transistors induced by interfacial dipole effects

Yi Sheng Lin, Bo Liang Yeh, Min Ruei Tsai, Horng Long Cheng, Shyh Jiun Liu, Fu Ching Tang, Wei Yang Chou

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

We describe an unusual phenomenon of time-dependent current growth in organic transistors, particularly n-type transistors. For an organic transistor based on N,N-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide with a polyimide dielectric layer, the time-dependent increase in the drain current and an approximately hysteresis-free electricity were obtained under dc-bias stress. These phenomena could be attributed to (a) reduction in the trap-state density located at the interface between polyimide and semiconductor, (b) gate field effect enhanced by electric dipoles within polyimide, and (c) a low interface trap lifetime. This study reveals that polymer dielectrics with moderate polar groups are suitable for application in stable organic devices.

原文English
文章編號104507
期刊Journal of Applied Physics
117
發行號10
DOIs
出版狀態Published - 2015 三月 14

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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