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InN-on-Si heteroepitaxy: Growth, optical properties, and applications
S. Gwo,
C. L. Wu
, C. H. Shen, H. W. Lin, H. Y. Chen, H. Ahn
物理學系
研究成果
:
Conference contribution
2
引文 斯高帕斯(Scopus)
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Engineering & Materials Science
Epitaxial growth
80%
Optical properties
71%
Nitrides
69%
Heterojunctions
34%
Infrared radiation
13%
Narrow band gap semiconductors
12%
Optoelectronic devices
12%
Solar cells
11%
Electron transport properties
10%
Spectroscopic ellipsometry
9%
Valence bands
9%
Photoelectron spectroscopy
8%
Photoluminescence
8%
Light absorption
7%
Lattice constants
7%
Monolayers
6%
Energy gap
5%
Doping (additives)
5%
Field effect transistors
5%
Polarization
4%
Semiconductor materials
4%
Wavelength
4%
Electronic equipment
4%
Temperature
2%
Mathematics
Nitrides
100%
Optical Properties
90%
Near Infrared
24%
Solar Cells
17%
Band Gap
16%
Semiconductors
12%
Spectroscopic Ellipsometry
10%
Photoluminescence
9%
Optical Absorption
9%
Electron Transport
9%
Field-effect Transistor
9%
Transport Properties
7%
Nitrogen
7%
Spectroscopy
6%
Polarity
6%
High Speed
6%
Alignment
6%
Wavelength
6%
Polarization
5%
Electronics
5%
Energy
3%
Physics & Astronomy
indium
55%
nitrides
53%
optical properties
37%
heterojunctions
13%
narrowband
9%
solar cells
7%
ellipsometry
5%
polarity
4%
optical absorption
4%
routes
4%
photoelectron spectroscopy
4%
transport properties
4%
field effect transistors
4%
alignment
4%
high speed
3%
nitrogen
3%
valence
3%
photoluminescence
3%
room temperature
2%
polarization
2%
electronics
2%
wavelengths
2%
electrons
2%
energy
1%
Chemical Compounds
Nitride
55%
Optical Property
42%
Band Offset
16%
Optoelectronics
9%
Solar Cell
9%
Semiconductor
7%
Band Gap
7%
Lattice Constant
5%
Valence Band
5%
Ellipsometry
5%
Superlattice
5%
Field Effect
5%
Photoelectron Spectroscopy
5%
Electron Transport
5%
Liquid Film
5%
Absorptivity
5%
Transport Property
4%
Polarity
4%
Photoluminescence
4%
Monolayer
3%
Polarization
3%
Wavelength
3%
Nitrogen
3%
Ambient Reaction Temperature
2%
Energy
2%