InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes

The authors report the use of InN/GaN alternative structure to replace the thick InGaN well layers in the InGaN/GaN multiquantum well (MQW) and the fabrication of GaN-based green light-emitting diodes (LEDs). Using this method, it was found that we could achieve InGaN "well layers" with high crystal quality due to the enhanced migration of adatoms during the growth. It was also found that indium composition in the InGaN "well layers" and the thickness of the InGaN "well layers" both depend strongly on the growth time of InN and GaN. It was also found that we could achieve stronger electroluminescence (EL) intensities with narrower full-width-half-maxima (FWHMs) from the LEDs with InN/GaN alternative growth InGaN "well layers". Furthermore, it was found that we could achieve better ideality factors and smaller reverse leakage currents from the proposed devices.