Insertion of simple structure between gate driver circuits to prevent stress degradation in in-cell touch panel using multi-V blanking method

This letter proposes a simple structure for in-cell touch thin-film transistor liquid crystal displays (TFT-LCDs) that are driven by the multi-V blanking method. The proposed structure is designed to activate the gate driver circuit after the touch sensing period to prevent the driving TFT of the gate driver circuit from exhibiting long-term stress during this period. Measured electrical characteristics of a fabricated hydrogenated amorphous silicon TFT are used to develop a model for the use in a HSPICE simulation. Based on the specifications of a 5.5 in FHD in-cell touch panel, the simulation results demonstrate that when the proposed structure is applied to a gate driver circuit, the error rates of the rising time and falling time between the output waveforms, which respectively precede and follow the touch sensing period, are both less than 2.14%.