@inproceedings{6714dfc93d7f4e0e91d0d60e86c939c0,
title = "Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor",
abstract = "Thinning the thickness of the channel to the nanosheet structure effectively improves the control ability of the gate voltage to the channel potential to enhance the performance of the device and become the development direction of the device. Still, the influence on reliability degradation is mostly not considered simultaneously. This work investigates the effect of channel thinning on polycrystalline-silicon thin film transistors using nanosheet channel structures on device performance and reliability and finds that the degradation of device reliability is more severe with the thinning of nanosheet channels. The results present a reliability issue for particular improvement in the future development of nanosheet structures.",
author = "Ma, {William Cheng Yu} and Su, {Chun Jung} and Kao, {Kuo Hsing} and Cho, {Ta Chun} and Guo, {Jing Qiang} and Wu, {Cheng Jun} and Wu, {Po Ying} and Hung, {Jia Yuan}",
note = "Publisher Copyright: {\textcopyright} 2023 FTFMD.; 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 ; Conference date: 04-07-2023 Through 07-07-2023",
year = "2023",
language = "English",
series = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "126--128",
booktitle = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
}