Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

William Cheng Yu Ma, Chun Jung Su, Kuo Hsing Kao, Ta Chun Cho, Jing Qiang Guo, Cheng Jun Wu, Po Ying Wu, Jia Yuan Hung

研究成果: Conference contribution

摘要

Thinning the thickness of the channel to the nanosheet structure effectively improves the control ability of the gate voltage to the channel potential to enhance the performance of the device and become the development direction of the device. Still, the influence on reliability degradation is mostly not considered simultaneously. This work investigates the effect of channel thinning on polycrystalline-silicon thin film transistors using nanosheet channel structures on device performance and reliability and finds that the degradation of device reliability is more severe with the thinning of nanosheet channels. The results present a reliability issue for particular improvement in the future development of nanosheet structures.

原文English
主出版物標題30th International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面126-128
頁數3
ISBN(電子)9784991216947
出版狀態Published - 2023
事件30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Hybrid, Kyoto, Japan
持續時間: 2023 7月 42023 7月 7

出版系列

名字30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

Conference

Conference30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023
國家/地區Japan
城市Hybrid, Kyoto
期間23-07-0423-07-07

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 媒體技術
  • 電子、光磁材料
  • 儀器
  • 原子與分子物理與光學

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