Insights to the scaling impact on back-gate biasing for FD SOI MOSFETs

Ming Yu Chang, Li Jing Wang, Meng-Hsueh Chiang

研究成果: Conference contribution

摘要

This work investigates the scaling impact on the feasibility of back-gate biasing for ultra-thin-body and BOX fully depleted SOI MOSFETs (UTBB FD SOI) at 5nm technology node. Though the effectiveness of the threshold voltage (Vt) modulation by back bias is limited due to bulk inversion as a result of silicon film scaling, such an issue of reduced Vt window can be relieved by decreasing BOX thickness as the back-gate coupling could be enhanced by thin-BOX-reduced inversion charge centroid in scaled SOI film.

原文English
主出版物標題2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781538676264
DOIs
出版狀態Published - 2019 二月 11
事件2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 - Burlingame, United States
持續時間: 2018 十月 152018 十月 18

出版系列

名字2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018

Conference

Conference2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
國家United States
城市Burlingame
期間18-10-1518-10-18

指紋

SOI (semiconductors)
field effect transistors
thin bodies
inversions
scaling
Silicon
silicon films
Threshold voltage
threshold voltage
centroids
Modulation
modulation
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

引用此文

Chang, M. Y., Wang, L. J., & Chiang, M-H. (2019). Insights to the scaling impact on back-gate biasing for FD SOI MOSFETs. 於 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 [8640185] (2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2018.8640185
Chang, Ming Yu ; Wang, Li Jing ; Chiang, Meng-Hsueh. / Insights to the scaling impact on back-gate biasing for FD SOI MOSFETs. 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018. Institute of Electrical and Electronics Engineers Inc., 2019. (2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018).
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abstract = "This work investigates the scaling impact on the feasibility of back-gate biasing for ultra-thin-body and BOX fully depleted SOI MOSFETs (UTBB FD SOI) at 5nm technology node. Though the effectiveness of the threshold voltage (Vt) modulation by back bias is limited due to bulk inversion as a result of silicon film scaling, such an issue of reduced Vt window can be relieved by decreasing BOX thickness as the back-gate coupling could be enhanced by thin-BOX-reduced inversion charge centroid in scaled SOI film.",
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Chang, MY, Wang, LJ & Chiang, M-H 2019, Insights to the scaling impact on back-gate biasing for FD SOI MOSFETs. 於 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018., 8640185, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018, Burlingame, United States, 18-10-15. https://doi.org/10.1109/S3S.2018.8640185

Insights to the scaling impact on back-gate biasing for FD SOI MOSFETs. / Chang, Ming Yu; Wang, Li Jing; Chiang, Meng-Hsueh.

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018. Institute of Electrical and Electronics Engineers Inc., 2019. 8640185 (2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018).

研究成果: Conference contribution

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Chang MY, Wang LJ, Chiang M-H. Insights to the scaling impact on back-gate biasing for FD SOI MOSFETs. 於 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018. Institute of Electrical and Electronics Engineers Inc. 2019. 8640185. (2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018). https://doi.org/10.1109/S3S.2018.8640185