In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen, J. M. Tsai, J. K. Sheu

研究成果: Article同行評審

60 引文 斯高帕斯(Scopus)

摘要

Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

原文English
頁(從 - 到)2027-2030
頁數4
期刊Solid-State Electronics
47
發行號11
DOIs
出版狀態Published - 2003 十一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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