In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes

C. L. Yu, C. H. Chen, S. J. Chang, Y. K. Su, S. C. Chen, P. C. Chang, P. C. Chen, M. H. Wu, H. C. Chen, K. C. Su

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.

原文English
頁(從 - 到)875-877
頁數3
期刊IEEE Photonics Technology Letters
17
發行號4
DOIs
出版狀態Published - 2005 四月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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