In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

Hsi Jen Pan, Shiou Ying Cheng, Wen Lung Chang, Shun Ching Feng, Kuo Hui Yu, Wen-Chau Liu

研究成果: Article同行評審

摘要

A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

原文English
頁(從 - 到)428-429
頁數2
期刊Electronics Letters
35
發行號5
DOIs
出版狀態Published - 1999 三月 4

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

指紋

深入研究「In<sub>0.53</sub>Al<sub>0.22</sub>Ga<sub>0.25</sub>As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure」主題。共同形成了獨特的指紋。

引用此