摘要
We demonstrate the good-performance In0.5Ga0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga 0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106cm-2. The performance of the MOSCAPs is comparable to that of In0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2×1012 eV-1̇cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.
原文 | English |
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文章編號 | 6376156 |
頁(從 - 到) | 235-240 |
頁數 | 6 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 60 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2013 1月 1 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 電氣與電子工程