In0.5Ga0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition

H. Q. Nguyen, H. D. Trinh, E. Y. Chang, C. T. Lee, Shin Yuan Wang, H. W. Yu, C. H. Hsu, C. L. Nguyen

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We demonstrate the good-performance In0.5Ga0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga 0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106cm-2. The performance of the MOSCAPs is comparable to that of In0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2×1012 eV-1̇cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.

原文English
文章編號6376156
頁(從 - 到)235-240
頁數6
期刊IEEE Transactions on Electron Devices
60
發行號1
DOIs
出版狀態Published - 2013 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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