Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch

Yen Ming Juan, Han Ting Hsueh, Shoou Jinn Chang, T. H. Chang, K. C. Lai, T. C. Cheng, Y. D. Lin, C. J. Chiu, Wen Yin Weng

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this letter, a Ta2O5/a-IGZO thin film transistor (TFT) was directly stacked on a crystalline-Si interdigitated back contact (IBC) photovoltaic (PV) cell to create a self-powered solar switch. The a-IGZO TFT and IBC PV cell were integrated into a single chip without an external circuit. This device exhibits switching property induced by illumination. The results show that it can be switched even under a low solar illumination of 300 W/m2 due to the low threshold voltage of the a-IGZO TFT (0.25 V). The ON/OFF current contrast ratio was measured to be ∼ 20 under 1-sun illumination. The fabrication process and characteristics of this device make it suitable and practicable for use as a self-powered solar switch.

原文English
文章編號6891171
頁(從 - 到)1040-1042
頁數3
期刊IEEE Electron Device Letters
35
發行號10
DOIs
出版狀態Published - 2014 10月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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