摘要
In this letter, a Ta2O5/a-IGZO thin film transistor (TFT) was directly stacked on a crystalline-Si interdigitated back contact (IBC) photovoltaic (PV) cell to create a self-powered solar switch. The a-IGZO TFT and IBC PV cell were integrated into a single chip without an external circuit. This device exhibits switching property induced by illumination. The results show that it can be switched even under a low solar illumination of 300 W/m2 due to the low threshold voltage of the a-IGZO TFT (0.25 V). The ON/OFF current contrast ratio was measured to be ∼ 20 under 1-sun illumination. The fabrication process and characteristics of this device make it suitable and practicable for use as a self-powered solar switch.
原文 | English |
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文章編號 | 6891171 |
頁(從 - 到) | 1040-1042 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 35 |
發行號 | 10 |
DOIs | |
出版狀態 | Published - 2014 10月 1 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 電氣與電子工程