Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch

Yen Ming Juan; Han Ting Hsueh; Shoou Jinn Chang; T. H. Chang; K. C. Lai; T. C. Cheng; Y. D. Lin; C. J. Chiu; Wen Yin Weng

doi:10.1109/LED.2014.2347039

Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch

Yen Ming Juan
, Han Ting Hsueh
, Shoou Jinn Chang
, T. H. Chang
, K. C. Lai
, T. C. Cheng
, Y. D. Lin
, C. J. Chiu
, Wen Yin Weng

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this letter, a Ta₂O₅/a-IGZO thin film transistor (TFT) was directly stacked on a crystalline-Si interdigitated back contact (IBC) photovoltaic (PV) cell to create a self-powered solar switch. The a-IGZO TFT and IBC PV cell were integrated into a single chip without an external circuit. This device exhibits switching property induced by illumination. The results show that it can be switched even under a low solar illumination of 300 W/m² due to the low threshold voltage of the a-IGZO TFT (0.25 V). The ON/OFF current contrast ratio was measured to be ∼ 20 under 1-sun illumination. The fabrication process and characteristics of this device make it suitable and practicable for use as a self-powered solar switch.

原文	English
文章編號	6891171
頁（從 - 到）	1040-1042
頁數	3
期刊	IEEE Electron Device Letters
卷	35
發行號	10
DOIs	https://doi.org/10.1109/LED.2014.2347039
出版狀態	Published - 2014 10月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2014.2347039

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引用此

Juan, Y. M., Hsueh, H. T., Chang, S. J., Chang, T. H., Lai, K. C., Cheng, T. C., Lin, Y. D., Chiu, C. J., & Weng, W. Y. (2014). Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch. IEEE Electron Device Letters, 35(10), 1040-1042. 文章 6891171. https://doi.org/10.1109/LED.2014.2347039

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title = "Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch",

abstract = "In this letter, a Ta2O5/a-IGZO thin film transistor (TFT) was directly stacked on a crystalline-Si interdigitated back contact (IBC) photovoltaic (PV) cell to create a self-powered solar switch. The a-IGZO TFT and IBC PV cell were integrated into a single chip without an external circuit. This device exhibits switching property induced by illumination. The results show that it can be switched even under a low solar illumination of 300 W/m2 due to the low threshold voltage of the a-IGZO TFT (0.25 V). The ON/OFF current contrast ratio was measured to be ∼ 20 under 1-sun illumination. The fabrication process and characteristics of this device make it suitable and practicable for use as a self-powered solar switch.",

author = "Juan, \{Yen Ming\} and Hsueh, \{Han Ting\} and Chang, \{Shoou Jinn\} and Chang, \{T. H.\} and Lai, \{K. C.\} and Cheng, \{T. C.\} and Lin, \{Y. D.\} and Chiu, \{C. J.\} and Weng, \{Wen Yin\}",

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year = "2014",

month = oct,

day = "1",

doi = "10.1109/LED.2014.2347039",

language = "English",

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Juan, YM, Hsueh, HT, Chang, SJ, Chang, TH, Lai, KC, Cheng, TC, Lin, YD, Chiu, CJ & Weng, WY 2014, 'Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch', IEEE Electron Device Letters, 卷 35, 編號 10, 6891171, 頁 1040-1042. https://doi.org/10.1109/LED.2014.2347039

TY - JOUR

T1 - Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch

AU - Juan, Yen Ming

AU - Hsueh, Han Ting

AU - Chang, Shoou Jinn

AU - Chang, T. H.

AU - Lai, K. C.

AU - Cheng, T. C.

AU - Lin, Y. D.

AU - Chiu, C. J.

AU - Weng, Wen Yin

PY - 2014/10/1

Y1 - 2014/10/1

N2 - In this letter, a Ta2O5/a-IGZO thin film transistor (TFT) was directly stacked on a crystalline-Si interdigitated back contact (IBC) photovoltaic (PV) cell to create a self-powered solar switch. The a-IGZO TFT and IBC PV cell were integrated into a single chip without an external circuit. This device exhibits switching property induced by illumination. The results show that it can be switched even under a low solar illumination of 300 W/m2 due to the low threshold voltage of the a-IGZO TFT (0.25 V). The ON/OFF current contrast ratio was measured to be ∼ 20 under 1-sun illumination. The fabrication process and characteristics of this device make it suitable and practicable for use as a self-powered solar switch.

AB - In this letter, a Ta2O5/a-IGZO thin film transistor (TFT) was directly stacked on a crystalline-Si interdigitated back contact (IBC) photovoltaic (PV) cell to create a self-powered solar switch. The a-IGZO TFT and IBC PV cell were integrated into a single chip without an external circuit. This device exhibits switching property induced by illumination. The results show that it can be switched even under a low solar illumination of 300 W/m2 due to the low threshold voltage of the a-IGZO TFT (0.25 V). The ON/OFF current contrast ratio was measured to be ∼ 20 under 1-sun illumination. The fabrication process and characteristics of this device make it suitable and practicable for use as a self-powered solar switch.

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Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch

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