Integration of bandgap-engineered double-stacked channel layers with nitrogen doping for high-performance InGaO TFTs

Yen Chi Cheng, Sheng Po Chang, Chun Po Yang, Shoou Jinn Chang

研究成果: Article

摘要

High-performance indium-gallium oxide (IGO) thin film transistors (TFTs) with a double-stacked channel layer (DSCL) were obtained by the in-situ nitrogen doping technique. By means of their distinctive feature of bandgap narrowing, devices with an IGO/IGO:N double-stacked channel showed superior electrical characteristics (μFE = 25 cm2/V s and ION/IOFF > 108) than those with a single channel layer. Moreover, owing to the reduced oxygen vacancies, the bias stability was significantly improved. Through X-ray photoelectron spectroscopy analysis, we optimized the model of bandgap engineering. It not only provides an explicit principle for the design of the DSCL configuration but also facilitates the manufacture of high-quality passivation-free TFTs for practical applications.

原文English
文章編號192102
期刊Applied Physics Letters
114
發行號19
DOIs
出版狀態Published - 2019 五月 13

指紋

gallium oxides
transistors
indium oxides
nitrogen
thin films
passivity
photoelectron spectroscopy
engineering
oxygen
configurations
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

@article{48dfca46402d4f7a9bdde5767de51691,
title = "Integration of bandgap-engineered double-stacked channel layers with nitrogen doping for high-performance InGaO TFTs",
abstract = "High-performance indium-gallium oxide (IGO) thin film transistors (TFTs) with a double-stacked channel layer (DSCL) were obtained by the in-situ nitrogen doping technique. By means of their distinctive feature of bandgap narrowing, devices with an IGO/IGO:N double-stacked channel showed superior electrical characteristics (μFE = 25 cm2/V s and ION/IOFF > 108) than those with a single channel layer. Moreover, owing to the reduced oxygen vacancies, the bias stability was significantly improved. Through X-ray photoelectron spectroscopy analysis, we optimized the model of bandgap engineering. It not only provides an explicit principle for the design of the DSCL configuration but also facilitates the manufacture of high-quality passivation-free TFTs for practical applications.",
author = "Cheng, {Yen Chi} and Chang, {Sheng Po} and Yang, {Chun Po} and Chang, {Shoou Jinn}",
year = "2019",
month = "5",
day = "13",
doi = "10.1063/1.5086457",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Integration of bandgap-engineered double-stacked channel layers with nitrogen doping for high-performance InGaO TFTs

AU - Cheng, Yen Chi

AU - Chang, Sheng Po

AU - Yang, Chun Po

AU - Chang, Shoou Jinn

PY - 2019/5/13

Y1 - 2019/5/13

N2 - High-performance indium-gallium oxide (IGO) thin film transistors (TFTs) with a double-stacked channel layer (DSCL) were obtained by the in-situ nitrogen doping technique. By means of their distinctive feature of bandgap narrowing, devices with an IGO/IGO:N double-stacked channel showed superior electrical characteristics (μFE = 25 cm2/V s and ION/IOFF > 108) than those with a single channel layer. Moreover, owing to the reduced oxygen vacancies, the bias stability was significantly improved. Through X-ray photoelectron spectroscopy analysis, we optimized the model of bandgap engineering. It not only provides an explicit principle for the design of the DSCL configuration but also facilitates the manufacture of high-quality passivation-free TFTs for practical applications.

AB - High-performance indium-gallium oxide (IGO) thin film transistors (TFTs) with a double-stacked channel layer (DSCL) were obtained by the in-situ nitrogen doping technique. By means of their distinctive feature of bandgap narrowing, devices with an IGO/IGO:N double-stacked channel showed superior electrical characteristics (μFE = 25 cm2/V s and ION/IOFF > 108) than those with a single channel layer. Moreover, owing to the reduced oxygen vacancies, the bias stability was significantly improved. Through X-ray photoelectron spectroscopy analysis, we optimized the model of bandgap engineering. It not only provides an explicit principle for the design of the DSCL configuration but also facilitates the manufacture of high-quality passivation-free TFTs for practical applications.

UR - http://www.scopus.com/inward/record.url?scp=85065826963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065826963&partnerID=8YFLogxK

U2 - 10.1063/1.5086457

DO - 10.1063/1.5086457

M3 - Article

AN - SCOPUS:85065826963

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 192102

ER -