Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Han Yin Liu, Chih Wei Lin, Wei Chou Hsu, Ching Sung Lee, Meng Hsueh Chiang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

研究成果: Article

3 引文 (Scopus)

摘要

This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl- doped Al2O3 is higher than the pure Al2O3 and the output current is enhanced. The threshold voltage of the enhancement mode AlGaN/GaN MOSHEMT with the Cl- doped Al2O3 gate dielectric layer rose from 0.2 to 1.3 V. Furthermore, the breakdown voltage of present enhancement mode AlGaN/GaN MOSHEMT reached 650 V. It was also found that the MOSHEMT with Cl- doped Al2O3 has higher gate leakage than that with pure Al2O3. The thermal stability of threshold voltage and current collapse phenomenon is described in this letter.

原文English
文章編號7736038
頁(從 - 到)91-94
頁數4
期刊IEEE Electron Device Letters
38
發行號1
DOIs
出版狀態Published - 2017 一月

指紋

Threshold voltage
Fabrication
Spray pyrolysis
Gate dielectrics
Electric breakdown
Thermodynamic stability
Permittivity
X ray photoelectron spectroscopy
Ultrasonics
Transmission electron microscopy
Thin films
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Liu, Han Yin ; Lin, Chih Wei ; Hsu, Wei Chou ; Lee, Ching Sung ; Chiang, Meng Hsueh ; Sun, Wen Ching ; Wei, Sung Yen ; Yu, Sheng Min. / Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication. 於: IEEE Electron Device Letters. 2017 ; 卷 38, 編號 1. 頁 91-94.
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abstract = "This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl- doped Al2O3 is higher than the pure Al2O3 and the output current is enhanced. The threshold voltage of the enhancement mode AlGaN/GaN MOSHEMT with the Cl- doped Al2O3 gate dielectric layer rose from 0.2 to 1.3 V. Furthermore, the breakdown voltage of present enhancement mode AlGaN/GaN MOSHEMT reached 650 V. It was also found that the MOSHEMT with Cl- doped Al2O3 has higher gate leakage than that with pure Al2O3. The thermal stability of threshold voltage and current collapse phenomenon is described in this letter.",
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Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication. / Liu, Han Yin; Lin, Chih Wei; Hsu, Wei Chou; Lee, Ching Sung; Chiang, Meng Hsueh; Sun, Wen Ching; Wei, Sung Yen; Yu, Sheng Min.

於: IEEE Electron Device Letters, 卷 38, 編號 1, 7736038, 01.2017, p. 91-94.

研究成果: Article

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AU - Liu, Han Yin

AU - Lin, Chih Wei

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Chiang, Meng Hsueh

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

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N2 - This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl- doped Al2O3 is higher than the pure Al2O3 and the output current is enhanced. The threshold voltage of the enhancement mode AlGaN/GaN MOSHEMT with the Cl- doped Al2O3 gate dielectric layer rose from 0.2 to 1.3 V. Furthermore, the breakdown voltage of present enhancement mode AlGaN/GaN MOSHEMT reached 650 V. It was also found that the MOSHEMT with Cl- doped Al2O3 has higher gate leakage than that with pure Al2O3. The thermal stability of threshold voltage and current collapse phenomenon is described in this letter.

AB - This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl- doped Al2O3 is higher than the pure Al2O3 and the output current is enhanced. The threshold voltage of the enhancement mode AlGaN/GaN MOSHEMT with the Cl- doped Al2O3 gate dielectric layer rose from 0.2 to 1.3 V. Furthermore, the breakdown voltage of present enhancement mode AlGaN/GaN MOSHEMT reached 650 V. It was also found that the MOSHEMT with Cl- doped Al2O3 has higher gate leakage than that with pure Al2O3. The thermal stability of threshold voltage and current collapse phenomenon is described in this letter.

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