Inter-sub-level spectroscopy of p-type modulation-doped Ge quantum dots

J. L. Liu, W. G. Wu, G. Jin, Y. H. Luo, S. G. Thomas, Y. Lu, K. L. Wang

研究成果: Article同行評審

摘要

Inter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.

原文English
頁(從 - 到)15-18
頁數4
期刊Materials Research Society Symposium - Proceedings
571
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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