Interactions in a coupled row of electrons formed in a quasi-one- dimensional quantum wire

L. W. Smith, K. J. Thomas, M. Pepper, W. K. Hew, I. Farrer, D. Anderson, G. A.C. Jones, D. A. Ritchie

研究成果: Conference contribution

摘要

We present transport measurements in quantum wires, where the electronic system separates into two rows in the weakly-confined regime, a result of Coulomb repulsion overcoming the confining potential. This transport regime is marked by a jump in conductance from zero to 4e 2/h. In wide split-gate devices this double row was seen to be coupled, leading to the creation of bonding and antibonding states. Using back-gated devices we tune the carrier density and show a density-driven transition from single- to double-row transport in the weak confinement regime.

原文English
主出版物標題Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
頁面337-338
頁數2
DOIs
出版狀態Published - 2011
事件30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
持續時間: 2010 7月 252010 7月 30

出版系列

名字AIP Conference Proceedings
1399
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
國家/地區Korea, Republic of
城市Seoul
期間10-07-2510-07-30

All Science Journal Classification (ASJC) codes

  • 一般物理與天文學

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