In this work, organic material-based resistive switching mechanisms were studied by using graphene oxide as the switching layer. With the insertion of a charge trapping graphene layer, the device showed good stability and good electrical bipolar switching properties, with an ON/OFF ratio about 102-103. The device gradually shifted toward complementary switching behavior while maintaining an ON/OFF ratio of ∼102 from bipolar switching behavior after a specific number of consecutive DC switching cycles with increases in the SET-RESET voltage. The conduction mechanisms for bipolar (P-F conduction) and the complementary switching were verified based on the electrical characteristics and curve fittings. Rapid increases in the injected electrons due to increased voltage in complementary switching facilitated the formation of an intermediate charge reservoir region that, in turn, enhanced performance. The device showed a retention period as high as 104 s at 85 °C and good DC endurance. The device is also capable of multi-resistance states to obtain multi-bit (4-bit) data storage, leading to high density memory realization.
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