Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

Chuan Pu Liu, Yen Lin Lai, Zheng Quan Chen

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We report on the interface characterization of InGaN/GaN multiple quantum wells with indium aggregation grown by metalorganic chemical vapor deposition. The interface related microstructure was analyzed by high-resolution transmission electron microscopy, high-resolution X-ray diffraction and high angle annular dark field. Luminescence measurements were carried out by micro-photoluminescence measurement. In addition, quantitative determination of the indium concentration inside the ultra-small dots was attempted. We demonstrate that the quantum dots are coherent and the interfaces remain sharp. The In content inside ∼2 nm InGaN dots is about 65% determined by spectrum imaging in energy-filtered transmission electron microscopy combined with multiple linear least squares fitting, which is slighter higher than the value obtained either from HRTEM or theoretical calculations. This discrepancy is briefly discussed but demands further studies for complete understanding.

原文English
頁(從 - 到)3922-3927
頁數6
期刊Applied Surface Science
252
發行號11
DOIs
出版狀態Published - 2006 3月 31

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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